PMZ390UN,315 NXP Semiconductors, PMZ390UN,315 Datasheet - Page 3

• Manufacturer Part Number: PMZ390UN,315
• Description: MOSFET N-CH 30V 1.78A SOT883
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMZ390UN,315

• Package / Case: SC-101, SOT-883
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.78A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.46 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.78 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060156315; PMZ390UN T/R; PMZ390UN T/R

NXP Semiconductors
PMZ390UN_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
P
10
10
(%)
I
120
D
der
10
80
40
-1
-2
0
1
10
function of solder point temperature
T
P
0
mb
der
-1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse
100 %
100
Limit R
1
DSon
150
T
= V
03aa17
sp
DS
( C)
/ I
D
200
Rev. 01 — 12 July 2007
DC
10
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of solder point temperature
I
0
der
N-channel TrenchMOS standard level FET
=
------------------- -
I
D 25 C
I
50
D
t
100 s
1 ms
10 ms
100 ms
p
= 10 s
10
2
100 %
100
V
DS
PMZ390UN
(V)
150
© NXP B.V. 2007. All rights reserved.
T
003aab833
03aa25
sp
( C)
10
200
3
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