BSS192,115 NXP Semiconductors, BSS192,115 Datasheet - Page 2

• Manufacturer Part Number: BSS192,115
• Description: MOSFET P-CH 240V 0.2A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BSS192,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 200mA
• Drain To Source Voltage (vdss): 240V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 200 mS, 60 mS
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933943950115::BSS192 T/R::BSS192 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
QUICK REFERENCE DATA
2002 May 22
V
V
I
R
D
SYMBOL
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interrupter in telephone sets
Relay, high-speed and line transformer drivers.
DS
GSth
DSon
P-channel enhancement mode
vertical D-MOS transistor
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
PARAMETER
I
I
D
D
= 1 mA; V
= 200 mA; V
2
PINNING - SOT89
handbook, halfpage
Marking code: KB.
PIN
CONDITIONS
1
2
3
GS
Bottom view
GS
Fig.1 Simplified outline and symbol.
= V
1
= 10 V
DS
SYMBOL
2
d
g
s
3
source
drain
gate
MAM354
12
240
2.8
200
MAX.
Product specification
DESCRIPTION
g
BSS192
d
s
V
V
mA
UNIT