BSS192,115 NXP Semiconductors, BSS192,115 Datasheet - Page 5

• Manufacturer Part Number: BSS192,115
• Description: MOSFET P-CH 240V 0.2A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BSS192,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 200mA
• Drain To Source Voltage (vdss): 240V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 200 mS, 60 mS
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933943950115::BSS192 T/R::BSS192 T/R

Philips Semiconductors
2002 May 22
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
T
(1) V
(2) V
T
(1) V
(2) V
(3) V
Fig.8
j
j
= 25 C.
(mA)
= 25 C.
I D
(A)
10
10
I D
0 8
0 6
0 4
0 2
Fig.6 Output characteristics; typical values.
10
GS
GS
GS
GS
GS
1
0
3
2
0
8
= 10 V.
= 6 V.
= 10 V.
= 5 V.
= 4 V.
Drain current as a function of drain-source
on-state resistance; typical values.
12
5
(1)
16
(3) V
(4) V
(5) V
10
(1)
GS
GS
GS
= 5 V.
= 4 V.
= 3 V.
20
15
24
20
R DSon ( )
(2)
(3)
(4)
(5)
V DS (V)
(2)
(3)
MDA177
MDA179
28
25
5
handbook, halfpage
handbook, halfpage
V
V
Fig.9
k
DS
GSth
=
(A)
1.2
k
1.1
0.9
0.8
0.7
I D
0 8
0 6
0 4
0 2
= 10 V; T
Fig.7 Transfer characteristic; typical values.
------------------------------------- -
V
at I
1
1
0
GSth
V
50
0
GSth
D
Temperature coefficient of gate-source
threshold voltage; typical values.
= 1 mA.
at 25 C
at T
j
= 25 C.
j
2
0
4
50
6
Product specification
100
8
T j (
V GS (V)
BSS192
MDA182
MDA178
o
C)
150
10