BUK9832-55A,115 NXP Semiconductors, BUK9832-55A,115 Datasheet

MOSFET N-CH 55V 12A SOT223

BUK9832-55A,115

Manufacturer Part Number
BUK9832-55A,115
Description
MOSFET N-CH 55V 12A SOT223
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9832-55A,115

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1594pF @ 25V
Power - Max
8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.029 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
12 A
Power Dissipation
8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934056573115
BUK9832-55A T/R
BUK9832-55A T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
4
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT223 (SC-73), simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
M3D087
c
c
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
Product availability:
BUK9832-55A in SOT223 (SC-73).
BUK9832-55A
TrenchMOS™ logic level FET
Rev. 01 — 31 January 2001
TrenchMOS™ technology
Q101 compliant
150 C rated
Logic level compatible.
Automotive and general purpose power switching:
12 V and 24 V loads
Motors, lamps and solenoids.
Simplified outline
1
technology, featuring very low on-state resistance.
SOT223 (SC-73)
Top view
1
2
4
MSB002 - 1
3
Symbol
MBB076
Product specification
g
d
s

Related parts for BUK9832-55A,115

BUK9832-55A,115 Summary of contents

Page 1

... TrenchMOS™ logic level FET Rev. 01 — 31 January 2001 M3D087 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK9832-55A in SOT223 (SC-73). 2. Features TrenchMOS™ technology Q101 compliant 150 C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: ...

Page 2

... D Conditions Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load starting Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET Typ Max Unit 150 Min Max Unit +150 C 55 +150 100 mJ © Philips Electronics N.V. 2001. All rights reserved. ...

Page 3

... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07734 Product specification 03aa17 I der (%) 125 150 175 der Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D. Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET 03aa25 120 100 100 125 150 4 ------------------ - 100 ...

Page 4

... Z th(j-sp) (K/ 0 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 07734 Product specification Conditions Figure Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET Value Unit 70 K/W 15 K/W 03nc45 (s) © Philips Electronics N.V. 2001. All rights reserved. ...

Page 5

... C 0 150 Figure 7 and 150 4 MHz; Figure 1 Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET Typ Max Unit 2 500 A 2 100 1195 1594 pF 212 254 pF 144 198 125 © Philips Electronics N.V. 2001. All rights reserved ...

Page 6

... 2 ( Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET Min Typ Max 0.85 1 DSon ( ( 03nc24 2 1.8 1.6 1.4 1 ...

Page 7

... C (pF) 3000 2500 2000 1500 1000 500 ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET 03aa36 min typ max 0.5 1 1 (V) ...

Page 8

... Product specification 2.5 3 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values ( 150 0.0 0.5 1 (V) Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET (nC 1.5 © Philips Electronics N.V. 2001. All rights reserved ...

Page 9

... 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2001. All rights reserved. ...

Page 10

... Product specification 7.00 3.85 3.60 3.50 0.30 4 4.80 3.90 7. MSA443 1.20 (3x) 1.30 (3x) 5.90 6.15 Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET solder lands solder resist occupied area solder paste © Philips Electronics N.V. 2001. All rights reserved ...

Page 11

... Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET Philips Semiconductors assumes no © ...

Page 12

... United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA71) Rev. 01 — 31 January 2001 BUK9832-55A TrenchMOS™ logic level FET © Philips Electronics N.V. 2001. All rights reserved ...

Page 13

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 January 2001 Document order number: 9397 750 07734 Printed in The Netherlands BUK9832-55A TrenchMOS™ logic level FET ...

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