BUK9832-55A,115 NXP Semiconductors, BUK9832-55A,115 Datasheet - Page 5

• Manufacturer Part Number: BUK9832-55A,115
• Description: MOSFET N-CH 55V 12A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9832-55A,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1594pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 12 A
• Power Dissipation: 8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056573115; BUK9832-55A T/R; BUK9832-55A T/R

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07734
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
f = 1 MHz;
V
V
D
D
DS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 10 V; V
= 5 V; I
= 25 C
= 150 C
= 4.5 V; I
= 10 V; I
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 31 January 2001
and
Figure 12
D
DS
DS
G
D
8
= 8 A;
D
GS
L
= 10
= 8 A
DS
= V
= 8 A
GS
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
1
0.6
TrenchMOS™ logic level FET
BUK9832-55A
Typ
1.5
0.05
2
27
25
1195
212
144
14
125
64
68
© Philips Electronics N.V. 2001. All rights reserved.
Max
2
2.3
10
500
100
32
59
36
29
1594
254
198
Unit
V
V
V
V
V
nA
m
m
m
m
pF
pF
pF
ns
ns
ns
ns
5 of 13
A
A