BUK9832-55A,115 NXP Semiconductors, BUK9832-55A,115 Datasheet - Page 4

• Manufacturer Part Number: BUK9832-55A,115
• Description: MOSFET N-CH 55V 12A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9832-55A,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1594pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 12 A
• Power Dissipation: 8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056573115; BUK9832-55A T/R; BUK9832-55A T/R

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07734
Product specification
Symbol
R
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-a)
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to solder
point
7.1 Transient thermal impedance
Z th(j-sp)
(K/W)
10 -1
10 -2
10 2
10
1
10 -6
= 0.5
10 -5
10 -4
Rev. 01 — 31 January 2001
10 -3
Conditions
Figure 4
10 -2
10 -1
1
P
t p
T
TrenchMOS™ logic level FET
10
BUK9832-55A
t p (s)
03nc45
=
t p
T
t
© Philips Electronics N.V. 2001. All rights reserved.
10 2
Value
70
15
Unit
K/W
K/W
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