BUK7575-55A,127 NXP Semiconductors, BUK7575-55A,127 Datasheet - Page 12

• Manufacturer Part Number: BUK7575-55A,127
• Description: MOSFET N-CH 55V 20.3A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 483pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.3 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056259127; BUK7575-55A; BUK7575-55A

11. Revision history
Table 6:
Philips Semiconductors
9397 750 07696
Product specification
Rev Date
01
20001208
Revision history
CPCN
-
Description
Product specification; initial version
Rev. 01 — 8 December 2000
BUK7575-55A; BUK7675-55A
TrenchMOS™ standard level FET
© Philips Electronics N.V. 2000. All rights reserved.
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