BUK7575-55,127 NXP Semiconductors, BUK7575-55,127 Datasheet

MOSFET N-CH 55V 19.7A SOT78

BUK7575-55,127

Manufacturer Part Number
BUK7575-55,127
Description
MOSFET N-CH 55V 19.7A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7575-55,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
19.7A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
61W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934050390127
BUK7575-55
BUK7575-55
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
April 1998
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
purpose
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
transistor
switching
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
in free air
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 10 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
19.7
175
55
61
75
MAX.
MAX.
MAX.
19.7
13.9
2.46
175
55
55
16
79
61
2
BUK7575-55
-
d
s
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK7575-55,127 Summary of contents

Page 1

... R Drain-source on-state DS(ON) resistance V GS PIN CONFIGURATION tab CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK7575-55 MAX. UNIT 55 19.7 61 175 SYMBOL MIN. MAX. UNIT - 19 175 ˚C MIN. MAX. UNIT ...

Page 2

... Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS 19.7 A; -dI /dt = 100 - Product specification BUK7575-55 MIN. TYP. MAX. UNIT 2.0 3.0 4 ...

Page 3

... CONDITIONS 100 ID/A 10 120 140 160 180 f & 0.1 0.01 120 140 160 180 Product specification BUK7575-55 MIN. TYP. MAX ˚C mb RDS(ON) = VDS/ VDS/V Fig.3. Safe operating area ˚ f single pulse; parameter Zth/ (K/W) 0.5 0.2 0 0.05 0. 1.0E-06 0.0001 0.01 1 t/s Fig ...

Page 4

... Fig.8. Typical transconductance ˚C . Fig.9. Normalised drain-source on-state resistance -100 GS(TO) 4 Product specification BUK7575- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚ VGS(TO max. typ. min. - 100 Fig.10. Gate threshold voltage. ...

Page 5

... 120 110 100 Ciss Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK7575-55 Tj/C = 175 0 0 0.5 1 VSDS/V Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS WDSS 100 120 140 Tmb / f(T ) ...

Page 6

... Philips Semiconductors TrenchMOS transistor Standard level FET RD VGS RG 0 Fig.17. Switching test circuit. April 1998 VDD + VDS - T.U.T. 6 Product specification BUK7575-55 Rev 1.100 ...

Page 7

... Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK7575-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.100 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 8 Product specification BUK7575-55 Rev 1.100 ...

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