BUK7575-100A,127 NXP Semiconductors, BUK7575-100A,127 Datasheet

MOSFET N-CH 100V 23A TO220AB

BUK7575-100A,127

Manufacturer Part Number
BUK7575-100A,127
Description
MOSFET N-CH 100V 23A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7575-100A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1210pF @ 25V
Power - Max
99W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
23 A
Power Dissipation
99000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056483127
BUK7575-100A
BUK7575-100A
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol Parameter
V
I
P
Avalanche ruggedness
E
Static characteristics
R
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009
drain-source voltage T
drain current
total power
dissipation
non-repetitive
drain-source
avalanche energy
drain-source
on-state resistance
Quick reference
Conditions
V
see
T
I
R
T
V
T
and
V
T
and
D
j
mb
j(init)
j
j
GS
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 14 A; V
Figure 1
= 25 °C; see
13
13
= 10 V; T
= 50 Ω; V
= 10 V; I
= 10 V; I
= 25 °C; unclamped
sup
j
D
D
and
≤ 175 °C
mb
GS
= 13 A;
= 13 A;
≤ 100 V;
Figure 12
= 25 °C;
Figure 12
= 10 V;
3
Figure 2
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
64
Max
100
23
99
100
187
75
Unit
V
A
W
mJ
mΩ
mΩ

Related parts for BUK7575-100A,127

BUK7575-100A,127 Summary of contents

Page 1

... BUK7575-100A N-channel TrenchMOS standard level FET Rev. 02 — 30 July 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... BUK7575-100A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB BUK7575-100A_2 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Rev. 02 — 30 July 2009 BUK7575-100A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2009. All rights reserved ...

Page 3

... sup °C; unclamped j(init) 03aa24 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET Min Max - 100 - 100 -20 20 and 16.2 Figure -55 175 -55 175 - 23 ...

Page 4

... NXP Semiconductors ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7575-100A_2 Product data sheet DSon DS D D.C. 10 Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET 03nb34 t p δ 100 100 (V) DS © NXP B.V. 2009. All rights reserved. ...

Page 5

... Single Shot −2 10 −6 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7575-100A_2 Product data sheet Conditions see Figure 4 −5 −4 − Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET Min Typ Max - - 1 03nb35 t p δ − ...

Page 6

... °C j from contact screw on mounting base to centre of die °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET Min Typ Max 100 - - 4 500 - 0. 100 - 2 100 - ...

Page 7

... Drain-source on-state resistance as a function of gate-source voltage; typical values 03aa35 (S) max (V) GS Fig 8. Forward transconductance as a function of drain current; typical values Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET 03nb30 (V) GS 03nb28 (A) D © NXP B.V. 2009. All rights reserved ...

Page 8

... Fig 10. Gate-source voltage as a function of turn-on gate charge; typical values 03aa32 120 R DSon (mΩ) 100 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET 03nb27 (nC) G 03nb32 (V)= 5 ...

Page 9

... C 1200 oss 1000 800 C rss 600 400 200 0 −2 − Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET 03nb26 = 175 ° ° 0.2 0.4 0.6 0.8 1 03nb33 (V) DS © NXP B.V. 2009. All rights reserved. ...

Page 10

... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7575-100A separated from data sheet BUK7575_7675_100A-01. BUK7575_7675_100A-01 20001024 (9397 750 07623) BUK7575-100A_2 ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 30 July 2009 BUK7575-100A N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7575-100A_2 All rights reserved. Date of release: 30 July 2009 ...

Related keywords