BUK9575-55A,127 NXP Semiconductors, BUK9575-55A,127 Datasheet - Page 11

MOSFET N-CH 55V 20A TO220AB

BUK9575-55A,127

Manufacturer Part Number
BUK9575-55A,127
Description
MOSFET N-CH 55V 20A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9575-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
68 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
643pF @ 25V
Power - Max
62W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.068 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
20 A
Power Dissipation
62000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056258127
BUK9575-55A
BUK9575-55A
10. Soldering
Philips Semiconductors
9397 750 07831
Product specification
Fig 18. Reflow soldering footprint for SOT404.
Dimensions in mm.
handbook, full pagewidth
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
2.15
1.50
0.30
3.00
1.50
Rev. 01 — 9 February 2001
BUK9575-55A; BUK9675-55A
10.85
10.60
10.50
7.50
7.40
5.08
1.20
1.30
1.55
1.70
MSD057
0.20
5.40
TrenchMOS™ logic level FET
8.275
8.075
© Philips Electronics N.V. 2001. All rights reserved.
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