BUK9575-55A,127 NXP Semiconductors, BUK9575-55A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9575-55A,127
• Description: MOSFET N-CH 55V 20A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9575-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 643pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.068 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 20 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056258127; BUK9575-55A; BUK9575-55A

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07831
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
GSM
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 01 — 9 February 2001
Conditions
T
T
T
T
Conditions
t
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
p
mb
mb
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
50 s
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
BUK9575-55A; BUK9675-55A
= 20 k
55 V; V
and
mb
= 25 C
GS
GS
3
Figure 1
GS
GS
GS
= 5 V; I
= 4.5 V; I
GS
= 5 V; R
= 5 V
= 5 V;
= 5 V;
p
p
D
= 10 A
D
GS
10 s;
10 s
Figure 2
= 10 A
D
= 50 ;
= 12 A;
TrenchMOS™ logic level FET
Typ
64
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
55
20
62
175
75
81
Max
55
55
20
14
81
62
+175
+175
20
81
72
10
15
Unit
V
A
W
m
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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