BUK95150-55A,127 NXP Semiconductors, BUK95150-55A,127 Datasheet - Page 7

• Manufacturer Part Number: BUK95150-55A,127
• Description: MOSFET N-CH 55V 13A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK95150-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 339pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056260127; BUK95150-55A; BUK95150-55A

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
February 2000
TrenchMOS
Logic level FET
Dimensions in mm
Net Mass: 2 g
damage to MOS gate oxide.
transistor
not tinned
3,0 max
max
(2x)
1,3
Fig.20. SOT78 (TO220AB); pin 2 connected to mounting base.
1 2 3
2,54 2,54
10,3
max
3,7
7
3,0
2,8
0,9 max (3x)
13,5
min
1,3
4,5
max
BUK95150-55A
BUK96150-55A
Product specification
min
5,9
2,4
0,6
Rev 1.000
15,8
max