BUK9515-100A,127 NXP Semiconductors, BUK9515-100A,127 Datasheet

MOSFET N-CH 100V 75A SOT78

BUK9515-100A,127

Manufacturer Part Number
BUK9515-100A,127
Description
MOSFET N-CH 100V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9515-100A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
8600pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0144 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
75 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934055410127
BUK9515-100A
BUK9515-100A
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
TO220AB and SOT404 . Using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
applications.
PINNING
TO220AB & SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
November 1999
Philips Semiconductors
TrenchMOS
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
R
tab/mb drain
D
D
DM
V
V
stg
DS
DGR
tot
th j-mb
th j-a
th j-a
PIN
GS
GSM
1
2
3
, T
j
envelope
DESCRIPTION
gate
drain
source
purpose
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
available
transistor
switching
in
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
3
SOT404
CONDITIONS
-
R
-
t
T
T
T
T
-
CONDITIONS
-
in free air
Minimum footprint, FR4
board
p
mb
mb
mb
mb
GS
mb
50 S
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
tab
TO220AB
1 2 3
V
V
GS
GS
= 10 V
= 5 V
SYMBOL
TYP.
MIN.
- 55
60
50
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
BUK9515-100A
BUK9615-100A
14.4
100
230
175
75
15
MAX.
MAX.
0.65
100
100
313
230
175
10
15
75
53
-
-
d
s
Rev 1.000
UNIT
UNIT
K/W
K/W
K/W
UNIT
˚C
W
m
m
V
V
V
V
A
A
A
˚C
W
V
A

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BUK9515-100A,127 Summary of contents

Page 1

... R Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab SOT404 CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - in free air Minimum footprint, FR4 board 1 Product specification BUK9515-100A BUK9615-100A MAX. 100 75 230 175 14.4 GS SYMBOL TO220AB s MIN. MAX. - 100 - 100 - 313 - 230 - 55 175 TYP. ...

Page 2

... Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK9515-100A BUK9615-100A MIN. TYP. MAX. UNIT 100 - - 1.5 2 ...

Page 3

... November 1999 CONDITIONS 1000 ID/A 100 10 120 140 160 180 f 0.01 120 140 160 180 0.001 Product specification BUK9515-100A BUK9615-100A MIN. TYP ˚C mb RDS(ON) = VDS/ VDS/V Fig.3. Safe operating area & f single pulse; parameter Zth / (K/ 0.5 0.2 0.1 0.1 0.05 0. 0.00001 ...

Page 4

... 150 gfs/S 100 50 80 100 = 25 ˚C. Fig.9. Typical transconductance ˚C. Fig.10. Normalised drain-source on-state resistance Product specification BUK9515-100A BUK9615-100A 175 Tj 0.5 1 1.5 2 2.5 VGS/V Fig.8. Typical transfer characteristics conditions parameter ID f(I ); conditions Rds(on) normalised to 25degC ...

Page 5

... Fig.14. Typical turn-on gate-charge characteristics mA Sub-Threshold Conduction ID/A 98 Ciss Coss Crss 10 100 , Fig.16. Normalised avalanche energy rating. iss oss rss = MHz 5 Product specification BUK9515-100A BUK9615-100A VDS = 14V 80V QG/nC = f(Q ); conditions parameter 100 80 60 Tj/C = 175 40 20 ...

Page 6

... Avalanche Time Fig.18. Maximum permissible repetitive avalanche current(I ) versus avalanche time(t AV inductive loads. November 1999 VDD + VDS - VGS -ID/100 T.U. shunt BV V DSS DD 25º (ms) ) for unclamped AV 6 Product specification BUK9515-100A BUK9615-100A + RD VDS - RG T.U.T. Fig.19. Switching test circuit. VDD Rev 1.000 ...

Page 7

... Epoxy meets UL94 V0 at 1/8". November 1999 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.20. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9515-100A BUK9615-100A 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...

Page 8

... Epoxy meets UL94 V0 at 1/8". November 1999 2 scale max. 0.85 0.64 1.60 10.30 2.90 15.40 11 2.54 0.60 0.46 1.20 9.70 2.10 14.80 REFERENCES IEC JEDEC EIAJ 8 Product specification BUK9515-100A BUK9615-100A 2 -PAK); 3 leads SOT404 mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.000 ...

Page 9

... Philips for any damages resulting from such improper use or sale. November 1999 11.5 9.0 2.0 3.8 5.08 Fig.22. SOT404 : soldering pattern for surface mounting. 9 Product specification BUK9515-100A BUK9615-100A 17.5 Rev 1.000 ...

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