BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet
BUK95150-55A
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BUK95150-55A Summary of contents
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... BUK95150-55A N-channel TrenchMOS logic level FET Rev. 02 — 21 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... °C; pulsed °C mb ≤ 50 µs pulsed °C mb pulsed °C mb ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET Graphic symbol mbb076 3 Version SOT78A Min Max - - -55 175 -55 ...
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... Fig 2. 003aaf403 WDSS (%) μ μs 100 μ (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET 100 I D (%) 120 ≥ Normalized continuous drain current as a function of mounting base temperature 120 ...
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... Conditions in free air 10 Z th(j-mb) (K/W) 1 0.2 0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET 003aaf417 25 ° (ms) AV Min Typ - - - 60 003aaf404 (s) p Max Unit 2.8 K/W - K/W © NXP B.V. 2011. All rights reserved. ...
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... ° ° ° /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 1 ° 175 ° 500 = 25 ° ...
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... DS Fig 8. 003aaf407 I ( (V) GS Fig 10. Transfer characteristics: drain current as a 003aaf409 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET ( 3.0 3.2 3.4 3.6 25 4.0 5 °C j Drain-source on-state resistance as a function of drain current ...
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... Fig 14. Sub-threshold drain current as a function of 003aaf413 (V) DS Fig 16. Gate-source voltage as a function of gate 100 150 ° ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET - typical ° gate-source voltage ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK95150-55A separated from data sheet BUK95150_96150-55A v.1. Product specification All information provided in this document is subject to legal disclaimers. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK95150-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK95150-55A ...