BUK9222-55A,127 NXP Semiconductors, BUK9222-55A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9222-55A,127
• Description: MOSFET N-CH 55V 48A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9222-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 103W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056697127; BUK9222-55A; BUK9222-55A

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9222-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9222-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
Package
Name
DPAK
Symbol
Static characteristics
R
Avalanche ruggedness
E
DS(AL)S
DSon
Quick reference data
Parameter
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 February 2011
Simplified outline
Conditions
V
T
V
T
V
T
see
I
R
T
SOT428 (DPAK)
D
…continued
j
j
j
j(init)
GS
GS
GS
GS
= 25 °C
= 25 °C
= 25 °C; see
= 48 A; V
Figure 13
= 4.5 V; I
= 10 V; I
= 5 V; I
= 50 Ω; V
1
= 25 °C; nk;unclamped
mb
2
D
3
sup
D
= 25 A;
D
GS
= 25 A;
≤ 55 V;
= 25 A;
Figure
= 5 V;
N-channel TrenchMOS logic level FET
12;
Graphic symbol
BUK9222-55A
mbb076
G
Min
-
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
17
19
-
Version
SOT428
Max Unit
24
20
22
160
2 of 13
mΩ
mΩ
mΩ
mJ