BUK9222-55A,127 NXP Semiconductors, BUK9222-55A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9222-55A,127
• Description: MOSFET N-CH 55V 48A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9222-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 103W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056697127; BUK9222-55A; BUK9222-55A

NXP Semiconductors
BUK9222-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
1.5
0.5
a
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
120
100
80
60
40
20
120
0
0.0
All information provided in this document is subject to legal disclaimers.
T
j
03ne89
( ° C)
180
Rev. 02 — 1 February 2011
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
C (pF)
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−2
C
C
C
SD
iss
oss
rss
(V)
03nc86
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9222-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nc93
(V)
10
2
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