BUK9222-55A,127 NXP Semiconductors, BUK9222-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9222-55A,127
• Description: MOSFET N-CH 55V 48A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9222-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 103W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056697127; BUK9222-55A; BUK9222-55A

NXP Semiconductors
BUK9222-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
200
180
160
140
120
100
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
GS
2
(V) =
4
min
8
typ
6
9
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03nc91
03aa35
10
2.2
(V)
7
6
5
4
3
Rev. 02 — 1 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
(S)
g
DSon
fs
30
25
20
15
10
50
40
30
20
10
0
of drain current; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
BUK9222-55A
40
6
60
8
© NXP B.V. 2011. All rights reserved.
V
GS
I
D
03nc90
03nc88
(A)
(V)
10
80
6 of 13