BUK7575-100A,127 NXP Semiconductors, BUK7575-100A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK7575-100A,127
• Description: MOSFET N-CH 100V 23A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1210pF @ 25V
• Power - Max: 99W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 23 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056483127; BUK7575-100A; BUK7575-100A

NXP Semiconductors
BUK7575-100A_2
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
R
DSon
= V
DS
/I
D
10
Rev. 02 — 30 July 2009
D.C.
10
N-channel TrenchMOS standard level FET
2
t
100 us
1 ms
10 ms
100 ms
p
= 10 us
P
V
DS
t
p
(V)
T
BUK7575-100A
δ =
03nb34
T
t
t
p
10
3
© NXP B.V. 2009. All rights reserved.
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