PSMN027-100PS,127 NXP Semiconductors, PSMN027-100PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN027-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 103W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 37A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.8 mOhm @ 15A, 10V
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 48 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 103 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064326127

NXP Semiconductors
6. Characteristics
Table 6.
PSMN027-100PS_2
Objective data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
I
see
I
see
I
see
V
V
T
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
= 25 °C; see
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 30 A; V
= 0 A; V
= 30 A; V
= 30 A; V
= 30 A; V
Figure 10
Figure 11
Figure 10
Figure 12
Figure 12
Figure 13
Figure 14
Figure 14
Figure 14
Figure 14
All information provided in this document is subject to legal disclaimers.
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
DS
Rev. 02 — 19 February 2010
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
DS
GS
and
and
and
and
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
GS
GS
Figure 16
Figure 14
= 0 V; T
= 0 V; f = 1 MHz;
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
10
GS
GS
GS
15
15
15
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
GS
j
= 10 V
= 175 °C;
= 25 °C;
= -55 °C;
= 100 °C;
= 175 °C;
= 25 °C;
j
= 25 °C
j
j
j
j
= 25 °C
and
= 125 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
15
PSMN027-100PS
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.08
10
10
-
59
21
0.92
30
24
8
4.8
3.4
9
4.9
1624
115
74
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.8
50
2
100
100
48
75
26.8
-
-
-
-
-
-
-
-
-
-
-
µA
pF
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
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