PSMN027-100PS,127 NXP Semiconductors, PSMN027-100PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN027-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 103W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 37A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.8 mOhm @ 15A, 10V
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 48 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 103 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064326127

NXP Semiconductors
PSMN027-100PS_2
Objective data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
50 V
20 V
20
(A)
I
S
40
30
20
10
30
0
V
0
All information provided in this document is subject to legal disclaimers.
Q
DS
003aae051
G
= 80 V
(nC)
Rev. 02 — 19 February 2010
40
0.3
T
j
= 175 ° C
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
0.9
4
3
2
T
10
as a function of drain-source voltage; typical
values
j
= 25 ° C
-1
003aae052
V
SD
(V)
1.2
PSMN027-100PS
1
10
© NXP B.V. 2010. All rights reserved.
V
003aae048
DS
(V)
C
C
C
oss
iss
rss
10
2
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