BUK9609-55A,118 NXP Semiconductors, BUK9609-55A,118 Datasheet - Page 2

MOSFET N-CH 55V 75A D2PAK

BUK9609-55A,118

Manufacturer Part Number
BUK9609-55A,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9609-55A,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
4633pF @ 25V
Power - Max
211W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
108 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057019118
BUK9609-55A /T3
BUK9609-55A /T3
Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 09229
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
D
DM
DR
DRM
DS
tot
j
DS
DGR
GS
tot
stg
j
DS(AL)S
DSon
Current is limited by power dissipation chip rating
Continuous current is limited by package.
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source avalanche
energy
Quick reference data
Limiting values
Rev. 01 — 21 February 2002
Conditions
T
T
T
T
T
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
j
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
55 V; V
and
mb
= 25 C
GS
GS
GS
3
Figure 1
GS
GS
GS
= 5 V; I
= 4.5 V; I
= 10 V; I
GS
= 5 V; R
= 5 V
= 5 V;
= 5 V;
p
p
D
D
= 25 A
D
GS
10 s;
10 s
Figure 2
= 25 A
= 25 A
D
= 50 ;
= 75 A;
BUK95/9609-55A
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1]
[2]
[2]
[1]
[2]
Typ
-
-
-
-
7.6
-
6.4
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
108
211
175
9
10
8
Max
55
55
108
75
75
433
211
+175
+175
108
75
433
400
15
Unit
V
A
W
m
m
m
Unit
V
V
V
A
A
A
A
W
A
A
A
mJ
C
C
C
2 of 14

Related parts for BUK9609-55A,118