BUK9609-55A,118 NXP Semiconductors, BUK9609-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9609-55A,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9609-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 4633pF @ 25V
• Power - Max: 211W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057019118; BUK9609-55A /T3; BUK9609-55A /T3

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 09229
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j
(K/W)
-
10 -1
10 -2
10 -3
mb)
1
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient vertical in still air; SOT78 package
10 -6
Thermal characteristics
d
0.2
0.1
0.05
0.02
single shot
= 0.5
7.1 Transient thermal impedance
10 -5
10 -4
Rev. 01 — 21 February 2002
Conditions
Figure 4
mounted on a printed circuit board;
minimum footprint; SOT404 package
10 -3
10 -2
BUK95/9609-55A
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
10 -1
Min
-
-
-
P
t p
t p (s)
T
Typ
-
60
50
03nh26
=
t p
T
t
Max
0.71
-
-
1
4 of 14
Unit
K/W
K/W
K/W