BUK9518-55A,127 NXP Semiconductors, BUK9518-55A,127 Datasheet - Page 7
![MOSFET N-CH 55V 61A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9518-55A,127
Manufacturer Part Number
BUK9518-55A,127
Description
MOSFET N-CH 55V 61A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9618-55A118.pdf
(14 pages)
Specifications of BUK9518-55A,127
Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 5V
Input Capacitance (ciss) @ Vds
2210pF @ 25V
Power - Max
136W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
61 A
Power Dissipation
136000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056811127
BUK9518-55A
BUK9518-55A
BUK9518-55A
BUK9518-55A
Philips Semiconductors
9397 750 08461
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
V GS(th)
j
= 1 mA; V
= 25 C; V
g fs
(V)
(S)
junction temperature.
drain current; typical values.
2.5
1.5
0.5
50
40
30
20
10
0
2
1
0
-60
0
DS
DS
10
= V
= 25 V
0
GS
20
max
typ
min
60
30
40
120
T j (
50
I D (A)
o
03aa33
C)
180
60
Rev. 01 — 27 August 2001
BUK9518-55A; BUK9618-55A
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
C
GS
(pF)
= 25 C; V
4500
4000
3500
3000
2500
2000
1500
1000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
gate-source voltage.
500
as a function of drain-source voltage; typical
values.
I D
= 0 V; f = 1 MHz
0
10 -2
0
DS
0.5
= V
10 -1
GS
1
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
1
1.5
C iss
C oss
C rss
typ
2
10
max
V DS (V)
2.5
03ne47
V GS (V)
03aa36
10 2
3
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