BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet - Page 6

• Manufacturer Part Number: BUK765R2-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK765R2-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 143 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK765R2-40B_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
Figure 10
I
Figure 10
I
Figure 10
V
V
V
V
V
Figure
V
Figure
I
T
V
T
V
R
from drain lead 6 mm from package to
centre of die; T
from upper edge of drain mounting base to
centre of die; T
from source lead to source bond pad;
T
I
Figure 13
I
V
D
D
D
D
D
D
S
S
j
j
j
DS
DS
DS
DS
GS
GS
GS
DS
G(ext)
DS
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
= 40 V; V
= 40 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 20 V; T
= 10 V; I
= 10 V; I
= 0 V; V
= 10 Ω; T
11; see
11; see
Rev. 02 — 16 January 2009
GS
DS
S
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs; V
j
GS
GS
L
= 25 °C
= 25 A; T
= 25 A; T
= 32 V; V
= 0 V; T
Figure 12
Figure 12
j
j
= V
= V
= V
Figure 14
Figure 15
= 1.2 Ω; V
GS
GS
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
= 25 °C
= 25 °C
j
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
= 25 °C; see
j
j
j
j
j
GS
j
j
j
= 25 °C; see
= 175 °C; see
= -55 °C; see
= 25 °C; see
= 175 °C; see
j
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
= 10 V;
= 25 °C
= -55 °C
= 10 V;
GS
= -10 V;
N-channel TrenchMOS standard level FET
BUK765R2-40B
Min
40
36
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
2
4.4
-
52
12
16
2842
711
296
15
51
81
56
4.5
2.5
7.5
0.85
54
38
© NXP B.V. 2009. All rights reserved.
Max
-
-
4
-
4.4
1
500
100
100
5.2
9.9
-
-
-
3789
853
406
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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