BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet - Page 9

• Manufacturer Part Number: BUK765R2-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK765R2-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 143 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3

NXP Semiconductors
BUK765R2-40B_2
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
100
I S
(A)
75
50
25
0
voltage; typical values
0.0
0.3
T j = 175 °C
0.6
(pF)
C
4000
3000
2000
1000
0.9
0
T j = 25 °C
10 -1
V SD (V)
03nk14
1.2
Rev. 02 — 16 January 2009
1
C iss
C oss
C rss
Fig 14. Gate-source voltage as a function of gate
10
V GS
(V)
10
8
6
4
2
0
charge; typical values
V DS (V)
0
N-channel TrenchMOS standard level FET
03nk21
10 2
V DD = 14 V
20
BUK765R2-40B
40
V DD = 32 V
Q G (nC)
© NXP B.V. 2009. All rights reserved.
03nk15
60
9 of 13