BUK765R2-40B,118 NXP Semiconductors, BUK765R2-40B,118 Datasheet - Page 7

• Manufacturer Part Number: BUK765R2-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK765R2-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 143 A
• Power Dissipation: 203000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057713118::BUK765R2-40B /T3::BUK765R2-40B /T3

NXP Semiconductors
BUK765R2-40B_2
Product data sheet
Fig 5.
Fig 7.
(A)
I D
(A)
I
10
10
10
10
10
10
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
14
12
20
2
10
2
9.5
9
4
min
8.5
8
7.5
7
6.5
6
5.5
5
4.5
typ
6
label is V GS (V)
4
max
V
8
GS
V DS (V)
(V)
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03aa35
Rev. 02 — 16 January 2009
10
6
Fig 6.
Fig 8.
R DSon
(mΩ)
g fs
(S)
18
13
80
60
40
20
8
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK765R2-40B
40
15
60
V GS (V)
© NXP B.V. 2009. All rights reserved.
I D (A)
03nk16
03nk18
80
20
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