PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 2
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PSMN015-110P,127
Manufacturer Part Number
PSMN015-110P,127
Description
MOSFET N-CH 110V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-110P127.pdf
(12 pages)
Specifications of PSMN015-110P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
110V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057141127::PSMN015-110P::PSMN015-110P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN015-110P,127
Manufacturer:
Infineon
Quantity:
500
Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 12544
Product data
Type number
PSMN015-110P
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
TO-220AB
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
Conditions
25 C
25 C
T
T
T
T
unclamped inductive load; I
t
V
p
Rev. 01 — 08 January 2004
mb
mb
mb
mb
mb
mb
GS
= 0.11 ms; V
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; starting T
T
T
j
j
175 C
175 C; R
Figure 1
GS
DD
GS
= 10 V;
= 10 V;
50 V; R
p
p
j
GS
= 25 C
= 20 k
10 s;
10 s
Figure 2
Figure 2
D
GS
= 36 A;
= 50 ;
Figure 3
and
TrenchMOS™ Standard level FET
3
PSMN015-110P
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
110
110
75
60.8
240
300
+175
+175
75
240
320
20
Version
2 of 12
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C