PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 6
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PSMN015-110P,127
Manufacturer Part Number
PSMN015-110P,127
Description
MOSFET N-CH 110V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-110P127.pdf
(12 pages)
Specifications of PSMN015-110P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
110V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057141127::PSMN015-110P::PSMN015-110P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN015-110P,127
Manufacturer:
Infineon
Quantity:
500
Philips Semiconductors
9397 750 12544
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
(m )
T
(A)
I D
j
j
50
40
30
20
10
= 25 C
30
20
10
= 25 C
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
0.2
10
0.4
20
V GS = 5 V
10 V
0.6
30
6 V
V GS = 4.2 V
5.6 V
0.8
5.2 V
40
V DS (V)
I D (A)
03am55
03am54
5.4 V
5.2 V
4.8 V
4.6 V
4.4 V
5.4 V
5.6 V
10 V
5 V
6 V
Rev. 01 — 08 January 2004
50
1
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
I D
2.5
1.5
0.5
= 25 C and 175 C; V
a
=
80
60
40
20
0
3
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0
TrenchMOS™ Standard level FET
2
PSMN015-110P
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
175 C
I
D
x R
4
DSon
120
V GS (V)
T j = 25 C
T j ( C)
03am56
03al21
180
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