PSMN015-110P,127 NXP Semiconductors, PSMN015-110P,127 Datasheet - Page 4
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PSMN015-110P,127
Manufacturer Part Number
PSMN015-110P,127
Description
MOSFET N-CH 110V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-110P127.pdf
(12 pages)
Specifications of PSMN015-110P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
110V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0405 Ohm @ 10 V
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057141127::PSMN015-110P::PSMN015-110P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN015-110P,127
Manufacturer:
Infineon
Quantity:
500
Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12544
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
10
1
10 -5
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
5.1 Transient thermal impedance
10 -4
Rev. 01 — 08 January 2004
10 -3
Conditions
Figure 4
vertical in still air
TrenchMOS™ Standard level FET
10 -2
PSMN015-110P
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
t p
Min Typ Max Unit
-
-
T
t p (s)
03am52
-
60
=
t p
T
t
10 -1
0.5
-
4 of 12
K/W
K/W