BUK9515-100A,127 NXP Semiconductors, BUK9515-100A,127 Datasheet - Page 5

• Manufacturer Part Number: BUK9515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9515-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055410127; BUK9515-100A; BUK9515-100A

Philips Semiconductors
Logic level FET
November 1999
TrenchMOS
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
20
15
10
2.5
1.5
0.5
5
0
0.01
V
Fig.13. Typical capacitances, C
2
1
0
-100
I
C = f(V
GS(TO)
D
0
VGS(TO) / V
= f(V
Fig.12. Sub-threshold drain current.
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
GS)
DS
-50
0.5
); conditions: V
0.1
; conditions: T
j
); conditions: I
2%
0
transistor
1
Tj / C
1
typ
50
1.5
j
VDS/V
GS
D
= 25 ˚C; V
= 1 mA; V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
98%
100
10
2
iss
, C
150
DS
DS
oss
= V
2.5
, C
= V
100
GS
rss
200
GS
Ciss
Coss
Crss
.
3
5
Fig.14. Typical turn-on gate-charge characteristics.
VGS/V
V
ID/A
I
Fig.16. Normalised avalanche energy rating.
100
F
GS
120
110
100
80
60
40
20
90
80
70
60
50
40
30
20
10
6
5
4
3
2
1
0
= f(V
0
0
0
= f(Q
0
Fig.15. Typical reverse diode current.
20
W
WDSS%
0.1
10
SDS
DSS
G
); conditions: I
40
); conditions: V
% = f(T
0.2
20
0.3
60
30
VDS =
mb
0.4
40
80
); conditions: I
Tj/C =
0.5
50
Tmb / C
14V
D
100
GS
= 25 A; parameter V
0.6
60
VSDS/V
QG/nC
175
= 0 V; parameter T
120
BUK9515-100A
BUK9615-100A
0.7
70
Product specification
80V
0.8
140
D
80
= 75 A
0.9
90
160
25
Rev 1.000
100
1
180
1.1
110
DS
j