BUK9515-100A,127 NXP Semiconductors, BUK9515-100A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9515-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055410127; BUK9515-100A; BUK9515-100A

Philips Semiconductors
Logic level FET
November 1999
TrenchMOS
current(I
Fig.18. Maximum permissible repetitive avalanche
VGS
0
100
I
AV
10
1
0.001
Fig.17. Avalanche energy test circuit.
AV
W
) versus avalanche time(t
DSS
RGS
0.01
0.5 LI
inductive loads.
Avalanche Time, t
Tj prior to avanche 150ºC
transistor
D
2
BV
0.1
DSS
L
AV
VDS
BV
T.U.T.
(ms)
DSS
AV
1
) for unclamped
shunt
25ºC
R 01
V
DD
-
+
-ID/100
VDD
10
6
VGS
0
Fig.19. Switching test circuit.
RG
RD
VDS
T.U.T.
BUK9515-100A
BUK9615-100A
Product specification
-
+
Rev 1.000
VDD