BUK9506-75B,127 NXP Semiconductors, BUK9506-75B,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9506-75B,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9506-75B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057111127::BUK9506-75B::BUK9506-75B

Philips Semiconductors
9397 750 10279
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
P
T
I D
(A)
120
10 3
10 2
der
mb
10
80
40
1
0
function of mounting base temperature.
10 -1
= 25 C; I
0
=
---------------------- -
P
tot 25 C
P
tot
DM
50
single pulse.
100%
100
Limit R DSon = V DS /I D
150
Capped at 75 A due to package
T mb
1
03na19
C)
Rev. 02 — 30 September 2002
200
Fig 2. Continuous drain current as a function of
I D
V
200
(A)
150
100
GS
50
0
mounting base temperature.
25
5 V
Capped at 75 A due to package
DC
10
50
75
BUK95/9606-75B
100
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V DS (V)
125
150
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
175
T mb (ºC)
03ng87
10 2
200
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