BUK9506-75B,127 NXP Semiconductors, BUK9506-75B,127 Datasheet - Page 9

• Manufacturer Part Number: BUK9506-75B,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9506-75B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057111127::BUK9506-75B::BUK9506-75B

Philips Semiconductors
9397 750 10279
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
I D
V
V
(A)
100
DS
GS
80
60
40
20
0
function of gate-source voltage; typical values.
0.0
= 25 V
= 0 V
0.5
1.0
T j = 175 ºC
1.5
2.0
I S
(A)
100
80
60
40
20
0
0.0
T j = 25 ºC
2.5
V GS (V)
03ng82
Rev. 02 — 30 September 2002
0.2
3.0
T j = 175 ºC
0.4
Fig 14. Gate-source voltage as a function of turn-on
0.6
V GS
T
(V)
j
= 25 C; I
5
4
3
2
1
0
gate charge; typical values.
0
T j = 25 ºC
0.8
V SD (V)
03ng79
D
20
= 25 A
1.0
V DD = 14 V
BUK95/9606-75B
40
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
60
V DD = 60 V
80
Q G (nC)
03ng80
100
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