BUK9506-75B,127 NXP Semiconductors, BUK9506-75B,127 Datasheet - Page 7

• Manufacturer Part Number: BUK9506-75B,127
• Description: MOSFET N-CH 75V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9506-75B,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 95nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057111127::BUK9506-75B::BUK9506-75B

Philips Semiconductors
9397 750 10279
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
I D
(A)
T
(m )
T
350
300
250
200
150
100
j
j
50
12
10
= 25 C; t
= 25 C
0
8
6
4
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
V GS = 3 V
10
p
= 300 s
2
5
100
4
3.2
4
3.4
6
3.6
V GS = 3 V
200
3.8
2.4
4
8
I D (A)
V DS (V)
5
03ng84
03ng85
10
Rev. 02 — 30 September 2002
300
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
(m )
T
a
j
2.4
1.6
0.8
8
7
6
5
4
= 25 C; I
a
=
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
0
-60
---------------------------- -
R
DSon 25 C
R
DSon
D
= 25 A
0
BUK95/9606-75B
5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
60
10
120
V GS (V)
T j ( C)
03nb25
180
15
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