PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN030-150P,127
• Description: MOSFET N-CH 150V 55.5A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN030-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 55.5A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056420127::PSMN030-150P::PSMN030-150P

NXP Semiconductors
8. Revision history
Table 7.
PSMN030-150P
Product data sheet
Document ID
PSMN030-150P v.2
Modifications:
PSMN030-150P v.1
Revision history
20101216
20000601
Release date
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 December 2010
Data sheet status
Product data sheet
Product specification
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN030-150P
Supersedes
PSMN030-150P v.1
-
© NXP B.V. 2010. All rights reserved.
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