PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet - Page 4
![MOSFET N-CH 150V 55.5A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN030-150P,127
Manufacturer Part Number
PSMN030-150P,127
Description
MOSFET N-CH 150V 55.5A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN030-150P127.pdf
(13 pages)
Specifications of PSMN030-150P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
98nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
55.5A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55.5 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056420127::PSMN030-150P::PSMN030-150P
NXP Semiconductors
PSMN030-150P
Product data sheet
Fig 3.
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
1
mb
R
= 25 °C; I
DS(on)
= V
D.C.
DS
10
DM
/ I
D
is single pulse
10
2
t
100 μs
1 ms
10 ms
100 ms
p
V
All information provided in this document is subject to legal disclaimers.
DS
= 10 μs
003aaf052
(V)
Rev. 02 — 16 December 2010
10
3
N-channel TrenchMOS SiliconMAX standard level FET
Fig 4.
I
(A)
AS
10
10
1
2
10
current as a function of avalanche period
unclamped inductive load
Single-shot avalanche rating; avalanche
−3
T
j
prior to avalanche = 150 °C
10
−2
PSMN030-150P
10
−1
1
© NXP B.V. 2010. All rights reserved.
25 °C
t
AV
003aaf064
(ms)
10
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