PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN030-150P,127
• Description: MOSFET N-CH 150V 55.5A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN030-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 55.5A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056420127::PSMN030-150P::PSMN030-150P

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN030-150P
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
P
(%)
der
100
80
60
40
20
0
function of mounting base temperature
Normalized total power dissipation as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source avalanche
energy
non-repetitive avalanche current
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf050
(°C)
Rev. 02 — 16 December 2010
200
Conditions
T
T
T
T
pulsed; T
T
T
pulsed; T
V
V
R
V
R
j
j
mb
mb
mb
mb
GS
sup
sup
GS
GS
≥ 25 °C; T
≥ 25 °C; T
N-channel TrenchMOS SiliconMAX standard level FET
= 100 °C
= 25 °C
= 25 °C
= 25 °C
= 10 V; T
= 50 Ω
= 50 Ω; unclamped
≤ 50 V; unclamped; t
≤ 50 V; V
Fig 2.
mb
mb
(%)
I
= 25 °C
= 25 °C
D
j
j
100
≤ 175 °C
≤ 175 °C; R
j(init)
80
60
40
20
GS
0
function of mounting base temperature
Normalized continuous drain current as a
0
= 10 V; T
= 25 °C; I
GS
p
50
j(init)
= 100 µs;
D
= 20 kΩ
= 35 A;
= 25 °C;
PSMN030-150P
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
003aaf051
175
175
Max
150
150
20
39
55.5
222
250
55.5
222
300
35
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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