PSMN030-150P,127 NXP Semiconductors, PSMN030-150P,127 Datasheet - Page 3
![MOSFET N-CH 150V 55.5A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN030-150P,127
Manufacturer Part Number
PSMN030-150P,127
Description
MOSFET N-CH 150V 55.5A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN030-150P127.pdf
(13 pages)
Specifications of PSMN030-150P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
98nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
55.5A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55.5 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056420127::PSMN030-150P::PSMN030-150P
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN030-150P
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
P
(%)
der
100
80
60
40
20
0
function of mounting base temperature
Normalized total power dissipation as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source avalanche
energy
non-repetitive avalanche current
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf050
(°C)
Rev. 02 — 16 December 2010
200
Conditions
T
T
T
T
pulsed; T
T
T
pulsed; T
V
V
R
V
R
j
j
mb
mb
mb
mb
GS
sup
sup
GS
GS
≥ 25 °C; T
≥ 25 °C; T
N-channel TrenchMOS SiliconMAX standard level FET
= 100 °C
= 25 °C
= 25 °C
= 25 °C
= 10 V; T
= 50 Ω
= 50 Ω; unclamped
≤ 50 V; unclamped; t
≤ 50 V; V
Fig 2.
mb
mb
(%)
I
= 25 °C
= 25 °C
D
j
j
100
≤ 175 °C
≤ 175 °C; R
j(init)
80
60
40
20
GS
0
function of mounting base temperature
Normalized continuous drain current as a
0
= 10 V; T
= 25 °C; I
GS
p
50
j(init)
= 100 µs;
D
= 20 kΩ
= 35 A;
= 25 °C;
PSMN030-150P
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
003aaf051
175
175
Max
150
150
20
39
55.5
222
250
55.5
222
300
35
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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