BUK7608-55A,118 NXP Semiconductors, BUK7608-55A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 0V
• Input Capacitance (ciss) @ Vds: 4352pF @ 25V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 126 A
• Power Dissipation: 254000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055643118; BUK7608-55A /T3; BUK7608-55A /T3

NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
20
V
DD
= 14 (V)
40
(A)
I
S
100
80
60
40
20
V
0
60
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 44 (V)
G
(nC)
03nh41
0.2
80
Rev. 03 — 14 June 2010
0.4
T
j
0.6
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
0.8
7000
6000
5000
4000
3000
2000
1000
0
T
10
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
1.0
N-channel TrenchMOS standard level FET
V
SD
03nh40
(V)
1.2
10
−1
C
C
C
rss
iss
oss
BUK7608-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nh47
(V)
10
2
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