BUK7608-40B NXP Semiconductors, BUK7608-40B Datasheet
BUK7608-40B
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BUK7608-40B Summary of contents
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... BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 — 24 September 2008 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... ° °C; see Figure ° °C; mb ≤ 10 µs; pulsed ° Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET Graphic symbol mbb076 Version SOT404 Min Max - - ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of solder point temperature Limit DSon DS D (1) 1 Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET Min Max = 241 GS 003aac070 50 100 150 T (°C) mb 003aac079 = 10 μ 100 μs ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7608-40B_4 Product data sheet Conditions mounted on a printed-circuit board; minimum footprint see Figure 4 −4 − Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET Min Typ Max - 0.95 003aac080 t p δ ...
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... ° °C; see Figure /dt = -100 A/µ - ° Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET Min Typ Max 4 0. ...
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... 200 300 I (A) D Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET 003aac073 (A) D 003aac074 = 175 °C 25 ° © ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aac075 2 a 1.5 1 0.5 0 − (V) GS Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET 003aab853 min typ max (V) GS 003aab851 0 60 120 T (°C) j © ...
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... Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 3000 C C iss (pF) 2000 C oss 1000 C rss 0 −2 − Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET 003aac072 (nC) G 003aac078 (V) DS © ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2008. All rights reserved. SOT404 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7608-40B_4 20080924 • Modifications: Type number BUK7608-40B separated from data sheet BUK75_7608-40B_3 BUK75_7608-40B_3 20071128 BUK75_7608-40B_2 20071116 BUK75_7608_40B-01 20030319 BUK7608-40B_4 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 24 September 2008 BUK7608-40B N-channel TrenchMOS standard level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 04 — 24 September 2008 Document identifier: BUK7608-40B_4 All rights reserved. ...