BUK9107-55ATE,118 NXP Semiconductors, BUK9107-55ATE,118 Datasheet - Page 13

• Manufacturer Part Number: BUK9107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9107-55ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 5V
• Input Capacitance (ciss) @ Vds: 5836pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056982118; BUK9107-55ATE /T3; BUK9107-55ATE /T3

Philips Semiconductors
Fig 19. SOT263B.
9397 750 09138
Product data
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
DIMENSIONS (mm are the original dimensions)
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
UNIT
mm
VERSION
OUTLINE
SOT263B
4.5
4.1
A
1.39
1.27
A 1
0.85
0.70
b
IEC
D
L
0.7
0.4
c
D 1
15.8
15.2
D
e
m
1
5-lead TO-220
6.4
5.9
D 1
JEDEC
p 1
E
p
10.3
REFERENCES
9.7
b
E
Rev. 01 — 7 February 2002
0
1.7
5
e
L 2
q
scale
w
15.0
13.5
EIAJ
L 1
L
5
M
L 1
2.4
1.6
10 mm
(1)
L 2
0.5
mounting
(2)
base
BUK91/9907-55ATE
0.8
0.6
m
Q
3.8
3.6
A
p
A 1
PROJECTION
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
c
EUROPEAN
4.3
4.1
TrenchPLUS logic level FET
p 1
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
01-01-11
0.4
w
SOT263B
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