BUK9107-55ATE,118 NXP Semiconductors, BUK9107-55ATE,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9107-55ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 5V
• Input Capacitance (ciss) @ Vds: 5836pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056982118; BUK9107-55ATE /T3; BUK9107-55ATE /T3

Philips Semiconductors
5. Quick reference data
Table 2:
9397 750 09138
Product data
Symbol Parameter
V
I
P
T
R
V
S
D
DS
tot
j
F
F
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
temperature sense diode forward
voltage
temperature sense diode temperature
coefficient
Quick reference data
Rev. 01 — 7 February 2002
Conditions
T
T
T
T
T
T
Tj = 25 C; I
55 C < T
j
mb
mb
j
j
j
= 25 C
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C
j
< 175 C; I
F
GS
GS
GS
= 250 A
GS
= 5 V; I
= 4.5 V; I
= 10 V; I
= 5 V
F
D
D
= 250 A
= 50 A
D
= 50 A
= 50 A
BUK91/9907-55ATE
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
TrenchPLUS logic level FET
Typ
-
-
-
-
5.8
6
5.2
658
1.54
Max
55
140
272
175
7
7.7
6.2
668
1.68
Unit
V
A
W
m
m
m
mV
mV/K
C
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