BUK9107-55ATE,118 NXP Semiconductors, BUK9107-55ATE,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9107-55ATE,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9107-55ATE,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 5V
• Input Capacitance (ciss) @ Vds: 5836pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056982118; BUK9107-55ATE /T3; BUK9107-55ATE /T3

Philips Semiconductors
9397 750 09138
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 1 mA; V
g fs
(S)
= 25 C; V
junction temperature.
drain current; typical values.
V GS(th)
140
120
100
80
60
40
20
0
(V)
2.5
1.5
0.5
0
2
1
0
-60
DS
DS
= V
20
= 25 V
-20
GS
20
40
max
min
typ
60
60
100
80
I D (A)
140
03ne81
T j ( o C)
03na17
100
Rev. 01 — 7 February 2002
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
C (pF)
GS
= 25 C; V
16000
14000
12000
10000
8000
6000
4000
2000
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
0
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
10 -2
I D
(A)
0
BUK91/9907-55ATE
DS
0.5
= V
10 -1
GS
1
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
min
TrenchPLUS logic level FET
1
1.5
typ
2
10
max
V DS (V)
V GS (V)
2.5
03ne86
03na18
10 2
C iss
C oss
C rss
3
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