BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 11
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BUK9606-75B,118
Manufacturer Part Number
BUK9606-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9606-75B118.pdf
(14 pages)
Specifications of BUK9606-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
95nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
153 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057114118::BUK9606-75B /T3::BUK9606-75B /T3
NXP Semiconductors
8. Revision history
Table 7.
BUK9606-75B
Product data sheet
Document ID
BUK9606-75B v.3
Modifications:
BUK95_9606_75B v.2
Revision history
Release date
20110207
20020930
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9606-75B separated from data sheet BUK95_9606_75B v.2.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 February 2011
Data sheet status
Product data sheet
Product data
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9606-75B
Supersedes
BUK95_9606_75B v.2
BUK95_9606_75B v.1
© NXP B.V. 2011. All rights reserved.
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