BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 7
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BUK9606-75B,118
Manufacturer Part Number
BUK9606-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9606-75B118.pdf
(14 pages)
Specifications of BUK9606-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
95nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
153 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057114118::BUK9606-75B /T3::BUK9606-75B /T3
NXP Semiconductors
BUK9606-75B
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
2
5
min
4
1
4
typ
6
V
GS
2
= 3 V
max
2.4
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03ng84
03ng53
(V)
Rev. 03 — 7 February 2011
10
3
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
200
150
100
50
8
7
6
5
4
0
of gate-source voltages; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
20
5
BUK9606-75B
10
40
© NXP B.V. 2011. All rights reserved.
V
I
D
GS
(A)
(V)
03ng83
03ng81
15
60
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