BUK9606-75B,118 NXP Semiconductors, BUK9606-75B,118 Datasheet - Page 5
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BUK9606-75B,118
Manufacturer Part Number
BUK9606-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9606-75B118.pdf
(14 pages)
Specifications of BUK9606-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
95nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
153 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057114118::BUK9606-75B /T3::BUK9606-75B /T3
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9606-75B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
Rev. 03 — 7 February 2011
−4
Conditions
see
mounted on a printed circuit
board ; minimum footprint
10
Figure 4
−3
10
−2
N-channel TrenchMOS logic level FET
P
t
10
p
−1
T
t
BUK9606-75B
p
Min
-
-
δ =
(s)
03ng88
t
T
t
p
1
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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