IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet - Page 4

• Manufacturer Part Number: IRLR4343PBF
• Description: MOSFET N-CH 55V 26A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR4343PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 26 A
• Gate Charge, Total: 28 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 79 W
• Resistance, Drain To Source On: 42 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 5.7 ns
• Transconductance, Forward: 8.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 5.3 ns
• Gate Charge Qg: 28 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR4343PBF

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1000.0
4
100.0
10.0
30
25
20
15
10
1.0
0.1
5
0
25
0.2
0.001
0.01
0.1
10
0.4
1
1E-006
50
T J = 175°C
V SD , Source-to-Drain Voltage (V)
T J , Junction Temperature (°C)
D = 0.50
0.6
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
0.20
0.10
0.05
0.02
0.01
0.8
T J = 25°C
100
1.0
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1.2
125
V GS = 0V
1.4
150
1.6
1.8
t 1 , Rectangular Pulse Duration (sec)
175
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= i/Ri
0.001
R
1
R
Fig 10. Threshold Voltage vs. Temperature
1
2.0
1.5
1.0
0.5
1000
100
10
τ
1
2
-75 -50 -25
R
τ
2
Fig 8. Maximum Safe Operating Area
2
R
0
2
Tc = 25°C
Tj = 175°C
Single Pulse
τ
C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
V DS , Drain-toSource Voltage (V)
Ri (°C/W)
T J , Temperature ( °C )
0.01
1
1.359
0.5409
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25
50
10
τi (sec)
0.00135
0.003643
75
I D = 250µA
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100 125 150 175
100
100µsec
10msec
1msec
0.1
1000