IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet - Page 5

• Manufacturer Part Number: IRLR4343PBF
• Description: MOSFET N-CH 55V 26A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR4343PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 50V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 26 A
• Gate Charge, Total: 28 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 79 W
• Resistance, Drain To Source On: 42 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -40 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 5.7 ns
• Transconductance, Forward: 8.8 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 5.3 ns
• Gate Charge Qg: 28 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLR4343PBF

Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Fig 12. On-Resistance Vs. Gate Voltage
200
150
100
180
160
140
120
100
50
80
60
40
20
0
0
2.0
25
1000
100
0.1
10
Starting T J , Junction Temperature (°C)
1
1.0E-06
V GS , Gate-to-Source Voltage (V)
50
4.0
Duty Cycle = Single Pulse
75
TOP
BOTTOM 1% Duty Cycle
I D = 19A
6.0
0.01
0.05
0.10
100
Single Pulse
Fig 14. Typical Avalanche Current Vs.Pulsewidth
T J = 125°C
T J = 25°C
125
8.0
1.0E-05
I D = 19A
150
10.0
175
tav (sec)
1.0E-04
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 17a, 17b.
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 14, 15).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
700
600
500
400
300
200
100
0
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
25
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
Starting T J , Junction Temperature (°C)
1.0E-03
50
= P
pulsewidth,
D (ave)
jmax
75
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
100
tav
thJC
125
TOP
BOTTOM
1.0E-02
jmax
150
is
3.3A
2.4A
I D
19A
5
175