IRLR4343PBF International Rectifier, IRLR4343PBF Datasheet - Page 3
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IRLR4343PBF
Manufacturer Part Number
IRLR4343PBF
Description
MOSFET N-CH 55V 26A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLR4343PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
740pF @ 50V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Drain
26 A
Gate Charge, Total
28 nC
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
79 W
Resistance, Drain To Source On
42 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-40 °C
Time, Turn-off Delay
23 ns
Time, Turn-on Delay
5.7 ns
Transconductance, Forward
8.8 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
26 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
5.3 ns
Gate Charge Qg
28 nC
Minimum Operating Temperature
- 40 C
Rise Time
19 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLR4343PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLR4343PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
1000.0
10000
1000
100.0
1000
10.0
100
Fig 3. Typical Transfer Characteristics
0.1
100
10
1.0
0.1
10
1
Fig 1. Typical Output Characteristics
0.1
0
1
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
2
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
2.3V
1
Coss
Ciss
Crss
4
2.3V
V DS = 30V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6
T J = 25°C
10
T J = 175°C
8
100
10
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
1000
100
Fig 2. Typical Output Characteristics
0.1
20
16
12
10
1
-60 -40 -20 0
8
4
0
0.1
0
I D = 19A
V GS = 10V
TOP
BOTTOM
I D = 19A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
10
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
2.3V
20 40 60 80 100 120 140 160 180
1
V DS = 44V
VDS= 28V
VDS= 11V
≤ 60µs PULSE WIDTH
Tj = 175°C
20
2.3V
FOR TEST CIRCUIT
SEE FIGURE 19
10
30
3
100
40