IRF8734PBF International Rectifier, IRF8734PBF Datasheet - Page 3

• Manufacturer Part Number: IRF8734PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8734PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3175pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
0.001
100
1000
Fig 3. Typical Transfer Characteristics
0.1
0.01
Fig 1. Typical Output Characteristics
10
100
0.1
1
10
1
1.5
0.1
V GS , Gate-to-Source Voltage (V)
T J = 150°C
2
V DS , Drain-to-Source Voltage (V)
2.5
1
2.3V
T J = 25°C
V DS = 15V
≤60µs PULSE WIDTH
3
≤ 60µs PULSE WIDTH
Tj = 25°C
3.5
10
TOP
BOTTOM
4
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
4.5
100
1000
100
0.1
10
1
Fig 2. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20 0 20 40 60 80 100 120 140 160
I D = 21A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
1
2.3V
IRF8734PbF
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
3