IRF8734PBF International Rectifier, IRF8734PBF Datasheet - Page 6

• Manufacturer Part Number: IRF8734PBF
• Description: MOSFET N-CH 30V 21A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8734PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3175pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF8734PbF
6
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance Vs. Gate Voltage
Fig 15a. Switching Time Test Circuit
20
15
10
5
0
2
R G
20V
V
V DS
GS
V GS, Gate -to -Source Voltage (V)
t p
≤ 0.1 %
≤ 1
4
I AS
D.U.T
0.01 Ω
L
6
T J = 25°C
T J = 125°C
15V
DRIVER
8
I D = 21A
+
-
+
-
V DD
A
10
Fig 14b. Unclamped Inductive Waveforms
V
90%
10%
V
1000
900
800
700
600
500
400
300
200
100
DS
GS
I
AS
0
Fig 15b. Switching Time Waveforms
25
Fig 13c. Maximum Avalanche Energy
t
d(on)
Starting T J , Junction Temperature (°C)
50
t
r
Vs. Drain Current
t p
75
100
TOP
BOTTOM 17A
V
t
d(off)
www.irf.com
(BR)DSS
125
t
f
I D
1.26A
2.03A
150